2000 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com s ensitron s emiconductor technical data data sheet 924, rev. a hermetic power schottky rectifier very low forward voltage drop applications: switching power supply converters free - wheeling diodes polarity protection diode features: soft reverse recovery at low and high temperature very low forward voltage drop low reverse leakage current low power loss, high efficiency high surge capacity guard ring for enhanced durability and long term reliability guaranteed reverse avalanche characteristics maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 200 v max. average forward current i f(av) 50% duty cycle, rectangular wave form 16 a max. peak one cycle non - repetitive surge current i f sm 8.3 ms, half sine wave 75 a non - repetitive avalanche energy e as t j = 25 c, i as = 0.75 a, l = 40mh 16 mj repetitive avalanche current i ar i as decay linearly to 0 in 1 s limited by t j max v a =1.5v r 0.75 a thermal resistance r jc - 1.5 c/w max. ju nction temperature t j - - 65 to +200 c max. storage temperature t stg - - 65 to +175 c electrical characteristics: characteristics symbol condition max. units max. forward voltage drop v f1 @ 16a, pulse, t j = 25 c 0.96 v v f2 @ 16a, pulse, t j = 125 c 0.80 v max. reverse current i r1 @v r = 200v, pulse, t j = 25 c 0.7 ma i r2 @v r = 200v, pulse, t j = 125 c 16 ma max. junction capacitance c t @v r = 5v, t c = 25 c f sig = 1mhz, v sig = 50mv (p - p) 600 pf max. reverse recovery time t rr i f = 0.5 a, i r = 1.0 a, i rm = 0.25 a, t j = 25 c 50 nsec shD126446
2000 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com technical data data sheet 924, rev. a - mechanical dimensions: in inches / mm single 1 2 3 to - 257 device type pin 1 pin 2 pin 3 to - 257 cathode anode anode curves shown are for bare die only. shD126446 0.0 0.2 0.4 0.6 0.8 1.0 forward voltage drop - v f (v) 10 -2 10 -1 10 0 10 1 instantaneous forward current - i f (a) typical forward characteristics 125 c 200 c 175 c 25 c 0 40 80 120 160 200 240 reverse voltage - v r (v) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 instantaneous reverse current - i r (ma) typical reverse characteristics 25 c 50 c 75 c 100 c 125 c 150 c 200 c 175 c 0 40 80 120 160 200 240 reverse voltage - v r (v) 0 150 300 450 600 junction capacitance - c t (pf) typical junction capacitance 1 2 3 .200 .190 (5.08 4.82) .045 .035 (1.14 0.89) .120(3.05) bsc .430 .410 (10.92 10.41) .420 .410 (10.67 10.41) .665 .645 (16.89 16.38) .537 .527 (13.64 13.39) 1.132 1.032 (28.75 26.21) .035 .025 (0.89 0.63) 3 places .100(2.54) bsc 2 places .150 .140 (3.81 3.56) dia.
2000 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com technical data data sheet 924, rev. a shD126446 disclaimer: 1 - the information given herein, including the specifications and dimensions, is subject to c hange without prior notice to improve product characteristics. before ordering, purchasers are advised to contact the sensitron semiconductor sales department for the late st version of the datasheet(s). 2 - in cases where extremely high reliability is requi red (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail - safe precaution s or other arrangement . 3 - in no event shall sensitron semiconductor be liable for any damages that may result from an accident or any other cause durin g operation of the users units according to the datasheet(s). sensitron semiconductor assumes no respo nsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4 - in no event shall sensitron semiconductor be liable for any failure in a semiconduc tor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5 - no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6 - the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of sensitron semiconductor. 7 - the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their ap plication will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any th ird party. when exporting these products (technologies), the necessary procedures are to be taken in accordan ce with related laws and regulations.
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